Organic light emitting diode device fabrication method and organic light emitting diode device fabricated thereby

ABSTRACT

Disclosed is an organic light emitting diode device fabrication method that includes: preparing a substrate which is defined into a display area and a non-display area; forming a light emission portion, which includes a thin film transistor and an organic light emission layer in the display area, and a pad portion in a part of the non-display area; sequentially forming a sacrificial layer and an encapsulation passivation film throughout the display and non-display areas; and separating the sacrificial layer and the encapsulation passivation film from the pad portion through an irradiation of laser light.

This present application claims priority under 35 U.S.C. §119(a) toKorean Patent Application No. 10-2013-0075306 filed on Jun. 28, 2013which is hereby incorporated by reference in its entirety for allpurposes as if fully set forth herein.

BACKGROUND OF THIS INVENTION

1. Field of the Invention

The present invention relates to an organic light emitting diode device.More particularly, the present invention relates to an organic lightemitting diode device fabrication method adapted to secure designcompetitiveness by realizing a narrow bezel, and to an organic lightemitting diode device fabricated thereby.

2. Discussion of the Related Art

An organic light emitting diode device is called as an organic lightemitting display (OLED) device. The organic light emitting diode deviceemits light by forming excitons through re-combination of electrons andelectric-holes, which are injected from an electron injection electrodeand an electric-hole injection electrode into an organic light emissionlayer, and transitioning the excitons from an excited state to a groundstate.

As such, the organic light emitting diode device has a self-luminousproperty. In other words, the organic light emitting diode device doesnot require any separate light source, unlike a liquid crystal displaydevice. In accordance therewith, the organic light emitting diode devicecan reduce thickness and weight. Also, the organic light emitting diodedevice has superior features such as low power consumption, highbrightness, and high-speed response. Therefore, the organic lightemitting diode device attracts public attention as a next generationdisplay device of mobile appliances. Moreover, a procedure offabricating the organic light emitting diode device is simple. As such,fabricating cost of the organic light emitting diode device is largelyreduced in comparison to that of existing liquid crystal displaydevices.

FIG. 1A is a perspective view showing a related art organic lightemitting diode device. FIG. 1B is a cross-sectional view showing theorganic light emitting diode device taken along line I-I′ in FIG. 1A.

Referring to FIGS. 1A and 1B, the related art organic light emittingdiode device includes a first substrate 20, on which a light emissionportion 40 is formed, and a second substrate (not shown) facing thefirst substrate 20. The first substrate 20 and the second substrate arecombined with each other by a sealing member.

In detail, the first substrate 20 is includes a display area AA and anon-display area NA. The display area AA is used for displaying images.The non-display area NA occupies the rest of the first substrate 20except the display area AA. A part of the non-display area NA is definedas a pad area PA.

The light emission portion 40 is formed on the display area AA. If theorganic light emitting diode device is in an active matrix mode,pluralities of gate lines GL and data lines DL crossing each other areformed within the light emission portion 40. Also, a plurality of pixelsis defined within the light emission portion by the pluralities of gatelines GL and data lines DL. Thin film transistors are formed atcrossings of the gate lines GL and the data lines DL. Each thin filmtransistor is connected to a first electrode 31 which is formed withinthe respective pixel. An organic light emission layer 33 and a secondelectrode 34 are sequentially formed on the first electrode 31. Ingeneral, the first electrode 31 is used as an anode and the secondelectrode 34 is used as a cathode. When the second electrode 34 isformed, the light emission portion 40 is completed.

Meanwhile, a pad portion 30 is formed in the pad area PA of thenon-display area NA. The pad portion 30 is connected to the gate anddata lines GL and DL of the display area AA. Such a pad portion 30connects the gate and data lines GL and DL to an external printedcircuit board (not shown) which is used as a driving circuit substrate.

However, the organic light emitting diode device has a property veryvulnerable to moisture and oxygen within an atmosphere. As such, theorganic light emitting diode device must be encapsulated in order toprevent the intrusion of moisture and oxygen. As such, it is necessaryfor the organic light emitting diode device to perform an encapsulationprocess.

FIG. 2 is a cross-sectional view illustrating a method of fabricating anorganic light emitting diode device according to the related art. Indetail, FIG. 2 is a cross-sectional view illustrating a method offorming an encapsulation passivation film which is used to prevent theintrusion of moisture and oxygen.

Referring to FIG. 2, the related fabrication method of the organic lightemitting diode device includes: preparing the first substrate 20 definedinto the display area AA and the non-display area NA; forming the lightemission portion 40 on the display area AA; forming the pad portion 30on the pad area PA of the non-display area NA; forming an encapsulationpassivation film 60 on the entire area of the first substrate 20 exceptthe pad portion 30; and combining the first substrate 20, on which theencapsulation passivation film 60 is formed, with the second substrate(not shown).

More specifically, the formation of the encapsulation passivation film60 includes depositing several organic and inorganic materials on thesecond electrode 34 of the light emission portion 40 which is used asthe cathode. At this time, the encapsulation passivation film 60 isformed in such a manner as to sufficiently cover the display area AAprovided with the light emission portion 40. However, the encapsulationpassivation film 60 must not be formed on the pad area PA provided withthe pad portion 30 which will come in contact with a driver IC(Integrated Circuit) chip and a FPC (Flexible Printed Circuit) film.

As described above, the organic light emitting diode device isvulnerable to moisture. Due to this, it is difficult to perform a wetetching process after the formation of the light emission portion 40.Therefore, a mask 1 is used to prevent the deposition of theencapsulation passivation film 60 in the pad area PA at the formation ofthe encapsulation passivation film 60.

The use of the mask 1 can cause many problems. For example, a fault canbe caused by curling of the mask 1 or misaligning of the mask 1, qualityof a formed film can deteriorate by foreign substance on the mask 1, anarc discharge can be generated in a chamber due to the mask 1,properties of a deposited film can become different by material qualityof the mask 1, and static electricity can be generated due to the mask1. Moreover, the use of the mask 1 can generate a shadow region in adeposited film and force a process margin to be reduced.

The above-mentioned problems become factors that deteriorate a yieldrate of the organic light emitting diode devices. Also, the mask 1requires an expensive fine alignment system. As such, many costsadditionally needed to manufacture and maintain the expensive equipment.Moreover, the fine alignment process forces not only tact time toincrease but also productivity of the organic light emitting diodedevices to deteriorate. Furthermore, it is difficult for a narrow bezelto design a panel because the shadow region is generation in thedeposited film.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an organic lightemitting diode device fabrication method and an organic light emittingdiode device fabricated thereby.

A method of fabricating an organic light emitting diode device mayinclude: forming a light emission portion in a display area of asubstrate; forming a pad portion in a non-display area of the substrate;forming a sacrificial layer over the light emission portion and the padportion; forming an encapsulation passivation film over the sacrificiallayer; and removing the sacrificial layer and the encapsulationpassivation film from the pad portion by means of irradiation of laserlight.

In embodiment, an organic light emitting diode device includes: asubstrate comprising a display area and a non-display area; a lightemission portion formed in the display area of the substrate; a padportion formed in the non-display area of the substrate; and asacrificial layer formed over the light emission portion; and anencapsulation passivation film formed over the sacrificial layer;wherein the pad portion is free from the sacrificial layer and theencapsulation passivation film.

Other systems, methods, features and advantages will be, or will become,apparent to one with skill in the art upon examination of the followingfigures and detailed description. It is intended that all suchadditional systems, methods, features and advantages be included withinthis description, be within the scope of the present disclosure, and beprotected by the following claims. Nothing in this section should betaken as a limitation on those claims. Further aspects and advantagesare discussed below in conjunction with the embodiments. It is to beunderstood that both the foregoing general description and the followingdetailed description of the present disclosure are exemplary andexplanatory and are intended to provide further explanation of thedisclosure as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the embodiments and are incorporated herein andconstitute a part of this application, illustrate embodiment(s) of thepresent disclosure and together with the description serve to explainthe disclosure. In the drawings:

FIG. 1A is a perspective view showing a related art organic lightemitting diode device;

FIG. 1B is a cross-sectional view showing the organic light emittingdiode device taken a line I-I′ in FIG. 1A;

FIG. 2 is a cross-sectional view illustrating a method of fabricating anorganic light emitting diode device according to the related art; and

FIGS. 3A through 3H are cross-sectional views illustrating step by stepa method of fabricating an organic light emitting diode device accordingto an embodiment of the present disclosure.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Reference will now be made in detail to an organic light emitting diodedevice fabrication method and an organic light emitting diode devicefabricated thereby in accordance with embodiments of the presentdisclosure, examples of which are illustrated in the accompanyingdrawings. These embodiments introduced hereinafter are provided asexamples in order to convey their spirits to the ordinary skilled personin the art. Therefore, these embodiments might be embodied in adifferent shape, so are not limited to these embodiments described here.In the drawings, the size, thickness and so on of a device can beexaggerated for convenience of explanation. Wherever possible, the samereference numbers will be used throughout this disclosure including thedrawings to refer to the same or like parts.

FIGS. 3A through 3H are cross-sectional views illustrating,step-by-step, a method of fabricating an organic light emitting diodedevice according to an embodiment of the present invention. In otherwords, the cross-sectional views of FIGS. 3A through 3H largely show apart of a display area AA and a pad area PA of a non-display area NA inorder to illustrate in detail a method of fabricating an organic lightemitting diode device according to an embodiment of the presentdisclosure. Specifically, the non-display area NA comprises a firstnon-display area portion NA1 and a second non-display area portion NA2.The first non-display area portion NA1 is arranged directly adjacent tothe display area AA and the second non-display area portion NA2 isarranged at a distance d from the display area AA, wherein the firstnon-display area portion NA1 is arranged between the display area AA andthe second non-display area portion NA2. The distance d between thenearest edge of the second non-display area portion NA2 and the nearestedge of the display area AA may be in the range from a few cm or a fewmm, e.g. in the range from about 5 mm to about 5 cm. The pad area PA isformed in the second non-display area portion NA2.

Referring to FIG. 3A, a buffer layer 201 is formed on the entire surfaceof a first substrate 200 which is defined to include a display area AAand a non-display area NA.

The first substrate 200 can be formed from one material selected from amaterial group which includes glass, plastic, polymer and so on, but itis not limited to this. If the first substrate 200 is a flexiblesubstrate which attracts public attention, the first substrate 200 canbe formed from any one selected from a material group which includespolyethylenenaphthalate (PEN), polyethyleneterephthalate (PET),polycarbonate (PC), polyethersulfone (PES), transparent polyimide (PI),polyarylate (PAR), polycyclic olefin (PCO), poly methyl methacrylate(PMMA), crosslinking type epoxy, crosslinking type urethane and so on.

The buffer layer 201 prevents the diffusion of impurities of the firstsubstrate 200 at the formation of an active layer 210 or an organiclight emission layer 233 (in FIG. 3D) which will be formed later. Thebuffer layer 201 can be formed in a single layer of silicon nitride or astacked layer structure of a silicon nitride layer and a silicon oxidelayer, as an example. However, the buffer layer 201 can be removed fromthe first substrate 200 as needed.

A transistor, e.g. a thin film transistor T is formed on the bufferlayer 201 within the display area AA. The transistor, e.g. the thin filmtransistor T includes an active layer 210, a source electrode 217, adrain electrode 218 and a gate electrode 215 which are formed above thebuffer layer 201. The active layer 210 includes a source region 211, adrain region 213 and a channel region 212. The channel region 212 isdisposed between the source and drain regions 211 and 213. In otherwords, the channel region 212 connects the source and drain regions 211and 213 to each other.

Subsequently, a gate insulation film 214 covering the active layer 210is formed on the entire surface of the first substrate 200 whichincludes the display area AA and the non-display area NA. Also, the gateelectrode 215 is formed on the gate insulation film 214 opposite to theactive layer 210 within the display area AA. The gate electrode 215 canbe formed from a metal material. For example, the gate electrode 215 canbe formed from any one selected from a metal group which includes MoW,Al, Cr and Al/Cr. Thereafter, an interlayer insulation film 216 coveringthe gate electrode 215 is formed on the entire surface of the firstsubstrate 200 including the display area AA and the non-display area NA.

Primary contact holes penetrating through the interlayer insulation film216 and the gate insulation film 214 are formed. The primary contactholes expose the source and drain regions 211 and 213 of the activelayer 210. The source electrode 217 and the drain electrode 218 areformed on the interlayer insulation film in such a manner as to beelectrically connected to the exposed source and drain regions 211 and213 via the primary contact holes, respectively. The source electrode217 and the drain electrode 218 can be formed from a metal material. Forexample, the source electrode 217 and the drain electrode 218 can beformed from one of Ti/Al and Ti/Al/Ti.

Although it is explained that the thin film transistor is formed in acoplanar structure, the present disclosure is not limited to this. Inother words, the thin film transistor can be formed in every structurewhich is known up to the present. For example, the thin film transistorcan be formed in any one of an inverted coplanar structure, a staggeredstructure, an inverted staggered structure and equivalent structuresthereto.

Meanwhile, pads (not shown) of the same material as the source and drainelectrodes 217 and 218 are formed on the interlayer insulation film 216corresponding to the pad area PA. The pads form a pad portion 300. Inanother way, the pads can be simultaneously formed from the samematerial as the gate electrode 215 when the gate electrode 215 isformed.

The pad portion 300 is connected to the gate and data lines GL and DL ofthe display area AA. Also, the pad portion 300 connects the gate anddata lines GL and DL with an external driver circuit board (not shown)corresponding to a printed circuit board.

After the thin film transistor T is completed, a passivation film 220and a planarization film 221 are sequentially formed on the entiresurface of the first substrate 200 including the display area AA and thenon-display area NA. A secondary contact hole 222 penetrating throughthe planarization film 221 and the passivation film 220 and exposing thedrain electrode 218 is formed.

As shown in FIG. 3B, a first electrode 231 is formed on theplanarization film 221 within the display area AA. The first electrode231 is electrically connected to the drain electrode 218 of the thinfilm transistor T through the secondary contact hole 222.

If the first electrode 231 is used as an anode, the first electrode 231can be formed from any one selected from a material group which includesITO (indium-tin-oxide), ITO/Ag, ITO/Ag/ITO, ITO/Ag/IZO(indium-zinc-oxide) and so on. However, the first electrode 231 of thepresent disclosure is not limited to the above-mentioned materials. TheITO (indium-tin-oxide) film can become a transparent conductive thinfilm which is used for injecting electric holes into an organic lightemission layer 233 (shown in FIG. 3D).

Referring to FIG. 3C, an organic bank film 232 defining pixels is formedafter the first electrode 231 is formed on the planarization film 221within the display area AA. The organic bank film 232 defines theboundary between red, green and blue pixels and allows light emissionboundary domains between the pixels to be definite. Also, the organicbank film 232 electrically isolates the first electrodes 231 of adjacentpixels from each other. Such an organic bank film 232 can be frompolyimide (PI) or others, but it is not limited to this. An openingexposing a part of the first electrode 231 is formed in the organic bankfilm 232, e.g. by means of photolithography and etching, e.g. dryetching.

As shown in FIG. 3D, an organic light emission layer 233 is formed onthe first electrode 231 which is exposed through the opening of theorganic bank film 232. Subsequently, a second electrode 234 covering theentire display area AA is formed.

The organic light emission layer 233 can include a light emission layerEML, an electron transport layer ETL and an electric-hole transportlayer HTL. The light emission layer EML forms excitons throughre-combination of electrons and electric-holes and emits light throughtransition of the excitons. The electron transport layer ETL properlycontrols a drift speed of the electrons. The electric-hole transportlayer HTL properly controls a drift speed of the electric-holes. Theorganic light emission layer 233 can further include an electroninjection layer EIL formed on the electron transport layer ETL and anelectric-hole injection layer HIL formed on the electric-hole transportlayer HTL. The electron injection layer EIL enhances an injectionefficiency of the electrons. The electric-hole injection layer HILenhances an injection efficiency of the electric-holes.

If the second electrode 234 is used as a cathode, the second electrode234 can be formed from any one selected from a metal group whichconsists of Al, an alloy of Mg and Ag, an alloy of Mg and Ca and so on.However, the second electrode 234 is not limited to the above-mentionedmetal materials.

In this way, the light emission portion 240 is completed through thesequential formation of the first electrode 231, the organic lightemission layer 233 and the second electrode 234.

When a voltage is applied between the first electrode 231 and the secondelectrode 234, the electrons generated in the second electrode 234 andthe electric-holes generated in the first electrode 231 are driftedtoward the organic light emission layer 233. As such, the excitons aregenerated within the organic light emission layer 233 through there-combination of the applied electrons and electric-holes and theexcitons are transitioned from an excited state to a ground state. As aresult, light is generated in the organic light emission layer 233. Theabove-mentioned light emission phenomenon can be explained when thefirst electrode 231 is used as an anode and the second electrode 234 isused as a cathode, as a general case.

Referring to FIG. 3E, a sacrificial layer 250 for a laser exfoliationprocedure is formed over the entire surface of the first substrate 200which includes the display area AA and the non-display area NA providedwith the pad area PA, after the light emission portion 240 is formed inthe display area AA. Thus, the sacrificial layer 250 covers the entiresurface of the display area AA and (at this stage) also the entiresurface of the non-display area NA (including the first non-display areaportion NA1 and the second non-display area portion NA3, thus alsoincluding the pad portion 300). To this end, a chemical vapor deposition(CVD) method or a physical vapor deposition (PVD) method can be used.The sacrificial layer 250 is used for a laser exfoliation procedure aswill be described in more detail further below. In other words, thesacrificial layer 250 allows a removal procedure of an encapsulationpassivation film 260 (shown in FIG. 3G) using a laser light to be easilyperformed later.

Preferably, the sacrificial layer 250 is formed in a thickness range ofabout 10-500 nm. If the sacrificial layer 250 is very thin, a laserabsorption rate of the sacrificial layer 250 deteriorates andinterfacial separation between the sacrificial layer 250 and the padportion 300 cannot be completely achieved or performed. Moreover, laserlight permeating through the sacrificial layer 250 can affect elements.

The sacrificial layer 250 can be formed from one of amorphous silicona-Si, zinc oxide ZnO, tin oxide SnO2 and so on. If the sacrificial layer250 is formed from amorphous silicon a-Si, green laser light with awavelength of about 532 nm can be used in the laser exfoliationprocedure. When the sacrificial layer 250 is formed from one of zincoxide ZnO and tin oxide SnO₂, IR (infrared) laser light with awavelength bend of about 710-1550 nm can be used in the laserexfoliation procedure.

Afterward, in FIG. 3F, an encapsulation passivation film 260 is formedon the entire surface of the first substrate 200 which includes thedisplay area AA and the non-display area NA provided with the pad areaPA, as shown in FIG. 3F. The encapsulation passivation film 260 can beformed using one of a chemical vapor deposition (CVD) method, a spincoating method, a heat deposition method, an ink-jet printing method, asputtering method and so on. When the encapsulation passivation film 260is formed by the CVD method, any mask is not used. For example, theencapsulation passivation film 260 can be formed by depositing siliconnitride Si₃N₄, silicon dioxide SiO₂, or others on the entire surface ofthe first substrate 200, which includes the display area AA and thenon-display area NA provided with the pad area PA, in a thickness ofabout 200 nm.

Subsequently, laser light is irradiated as shown in FIG. 3G, in order toremove the encapsulation passivation film 260 over the pad portion 300.Preferably, the irradiated laser light permeates through theencapsulation passivation film 260 and is absorbed into the sacrificiallayer 250. As such, the encapsulation passivation film 260 is formedfrom a material with a high laser transmittance (e.g. Si₃N₄, SiO₂), e.g.about 98% of the irradiated laser light may be transmitted, e.g. for alaser light having a wavelength of 532 nm. However, it should bementioned that the transmittance of the encapsulation passivation film260 is independent from the used wavelength of the laser light. Thesacrificial layer 250 is formed from a material with a high laserabsorption rate. In various embodiments, the laser light may be focusedinto the sacrificial layer 250 in order to provide a high energytransfer and thus heat transfer into the sacrificial layer 250. Also,laser light smaller than band gap energy of the encapsulationpassivation film 260 but larger than band gap energy of the sacrificiallayer 250 can be selected. In various embodiments, the sacrificial layer250 is thinner than the encapsulation passivation film 260. By way ofexample, the encapsulation passivation film 260 may have a thickness inthe range from about 500 nm to about 2 μm, e.g. a thickness in the rangefrom about 750 nm to about 1.5 μm, e.g. a thickness of about 1 μm.Furthermore, the sacrificial layer 250 may have a thickness in the rangefrom about 25 nm to about 75 nm, e.g. a thickness in the range fromabout 35 nm to about 65 nm, e.g. a thickness of about 50 nm. When thematerial of the sacrificial layer 250 becomes gaseous, the volume of thesacrificial layer 250 is extended and thus a pressure is generated toseparate the encapsulation passivation film 260 in the pad area.

The sacrificial layer 250 absorbing the laser light L expands in volume.In accordance therewith, the sacrificial layer 250 on the pad portion300 together with the encapsulation passivation film 260 can beseparated from the pad portion 300. In detail, due to the absorption ofthe laser light L, a surface temperature of the sacrificial layer 250rises in an instant (or moment) and a surface phase of the sacrificiallayer 250 changes. In other words, the surface portion of thesacrificial layer 250 changes from a solid phase into a gas phasethrough a liquid phase. The liquid phase is maintained during a veryshort period. Consequently, it is explained that the surface portion ofthe sacrificial layer 250 changes from the solid phase into the gasphase. The phase change of the surface portion of the sacrificial layer250 into the gas phase allows a part of the surface portion of thesacrificial layer 250 to be gasified and removed. In accordancetherewith, the sacrificial layer 250 and the encapsulation passivationfilm 260 can be separated from the pad portion 300. As described above,the pad area PA in the second non-display area portion NA2 is arrangedat least at the distance d from the display area AA. The distance d isselected such that it is sufficiently large to ensure that cracks of theencapsulation passivation film 260 of the non-display area (inparticular of the first non-display area portion NA1 do not extend intothe portion of the encapsulation passivation film 260 of the displayarea AA.

In another way, a process of forming an adhesive layer (not shown) canbe added between the formation process of the sacrificial layer 250 andthe formation process of the encapsulation passivation film 260. Theadhesive layer forces the sacrificial layer 250 to be separated togetherwith the encapsulation passivation film 260 when the encapsulationpassivation film 260 is separated.

Referring to FIG. 3H, a second substrate 320 is combined with the firstsubstrate 200 which is provided with the encapsulation passivation film260. In other words, the second substrate 320 and the first substrate200 are assembled and fixed together. The first and second substrates200 and 320 are combined with each other by a sealing material 310. Inaccordance therewith, an organic light emitting diode device inaccordance with the present disclosure is completed.

In detail, the first substrate 200 includes the light emission portion240, the sacrificial layer 250 and the encapsulation passivation film260, which are formed in the display area AA. Also, the first substrate200 includes the pad portion 300 formed in the pad area PA of thenon-display area NA.

An edge portion of the second substrate 320 facing the first substrate200 is removed through a cutting process. The cutting process isperformed in order to externally expose the pad portion 300 on the firstsubstrate 200. Also, a driver IC (Integrated circuit) chips, a flexibleprinted circuit (FPC) board or others is electrically connected to thepad portion 300 through the following process.

In the manner, the present invention can realize a narrow bezel. Assuch, the present invention can secure design competitiveness of theorganic light emitting diode device.

Also, the present invention can omit a CVD mask procedure. In accordancetherewith, the present invention can reduce fabricating cost of theorganic light emitting diode device.

It is to be noted that the sacrificial layer 250 may be formed with sucha thickness with respect to the encapsulation passivation film 260 thata constructive interference of the light to be emitted may result in theencapsulation passivation film 260 due to sacrificial layer 250. Thismay be particular advantageous in the case of a top emitter organiclight emitting diode device.

Furthermore, an increase of the transmittance of the sacrificial layer250 and the encapsulation passivation film 260 with respect to bluelight may be achieved. This may be advantageous to overcompensate forbrightness of blue color light portion and may make it possible toreduce the size of a respective blue subpixel, in particular in thefield of an OLED.

Moreover, it is to be noted that neither bank material nor cathodematerial is formed in the pad area PA: these materials are only formedin the display area AA.

Although the present disclosure has been limitedly explained regardingonly the embodiments described above, it should be understood by theordinary skilled person in the art that the present disclosure is notlimited to these embodiments, but rather that various changes ormodifications thereof are possible without departing from the spirit ofthe present disclosure. Accordingly, the scope of the present disclosureshall be determined only by the appended claims and their equivalentswithout being limited to the detailed description.

1-14. (canceled)
 15. An organic light emitting diode device comprising:a substrate comprising a display area and a non-display area; a lightemission portion in the display area of the substrate; a pad portion inthe non-display area of the substrate; a sacrificial layer over thelight emission portion; and an encapsulation passivation film over thesacrificial layer, wherein the pad portion does not contact thesacrificial layer and the encapsulation passivation film, and whereinthe sacrificial layer has a higher absorption rate with respect to anirradiated laser light than the encapsulation passivation film.
 16. Theorganic light emitting diode device of claim 15, wherein theencapsulation passivation film has a higher transmittance rate withrespect to the irradiated laser light than the sacrificial layer. 17.The organic light emitting diode device of claim 15, wherein theencapsulation passivation film is in physical contact with thesacrificial layer.
 18. The organic light emitting diode device of claim15, wherein the light emission portion comprises an organic lightemission layer.
 19. The organic light emitting diode device of claim 15,wherein a thickness range of the sacrificial layer is 10-500 nm.
 20. Theorganic light emitting diode device of claim 15, wherein the sacrificiallayer includes at least one of amorphous silicon, zinc oxide and tinoxide as a material.
 21. The organic light emitting diode device ofclaim 15, wherein the sacrificial layer has a thickness so as to providea constructive interference of light generated by the light emissionportion.
 22. The organic light emitting diode device of claim 21,wherein the sacrificial layer has a thickness so as to provide aconstructive interference of blue light generated by the light emissionportion.
 23. The organic light emitting diode device of claim 15,wherein a band gap energy of the encapsulation passivation film islarger than a band gap energy of the sacrificial layer.
 24. The organiclight emitting diode device of claim 15, further comprising an adhesivelayer between the encapsulation passivation film and the sacrificiallayer.
 25. The organic light emitting diode device of claim 15, whereinthe pad portion is electrically connected to one of a driver IC(Integrated circuit) chips and a flexible printed circuit (FPC) board.26. The organic light emitting diode device of claim 15, furthercomprising an upper substrate facing the substrate, wherein thesubstrate and the upper substrate are combined with each other by asealing material.
 27. The organic light emitting diode device of claim26, wherein the pad portion is externally exposed from the uppersubstrate.